発表論文

  1. "p-type nonpolar a-ZnO:N thin films on r-sapphire substrates grown by molecular beam epitaxy", N. Maekawa, H. Nakayama, N. Yamane, K. Irie, T. Abe, H. Kasada, K. Ichino, and K. Akaiwa, J. Electronic Materials, 49, pp. 4474-4478 (2020).

  2. "High gain ultraviolet avalanche photodiodes using ZnSe-based organic-inorganic hybrid structure", Y. Ichikawa, K. Tanaka, K. Nakagawa Y. Fujii. K. Yoshida, K. Nakamura, R. Miyazaki, T. Abe, H. Kasada, K. Ichino, and K. Akaiwa, J. Electronic Materials, 49, pp. 4589-4593 (2020).

  3. "Electrical Properties of Sn‐Doped α‐Ga2O3 Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition", K. Akaiwa, K. Ohta, T. Sekiyama, T. Abe, T. Shinohe, K. Ichino, physica status solidi (a), 217, 1900632 (2020).

  4. "白色発光ダイオードの駆動電流パルス幅制御による高出力動作を用いた植物栽培", 原田宜明, 笠田洋文, 安東孝止, 阿部友紀, 市野邦男, 材料 67, pp.834-839 (2018).

  5. "Molecular beam epitaxy and p-type doping of ZnMgSTe quaternary alloys" , K. Ichino, K. Sahashi, N. Nanba, T. Nakashima, Y. Tomita, K. Akaiwa, and T. Abe, J. Electronic Materials, 47, pp.4321 -4324 (2018).

  6. "Degradation and its control of ultraviolet avalanche photodiodes using PEDOT:PSS/ZnSSe organic–inorganic hybrid structure", T. Abe, S. Uchida, K. Tanaka, T. Fujisawa, H. Kasada, K. Ando, K. Akaiwa, and K. Ichino, J. Electronic Materials, 47, pp.4385-4387 (2018).

  7. "ZnSTe coherently grown onto GaP substrates by molecular beam epitaxy using ZnS buffer layers", K. Ichino, S. Kashiyama, N. Nanba, H. Hasegawa, T. Abe, phys. stat. sol. (b), 253 pp.1476-1479 (2016).

  8. "Development of ZnSe-based organic–inorganic hybrid UV-APDs array", T. Abe, R.i Inoue, T. Fujimoto, K. Tanaka, S. Uchida, H. Kasada, K. Ando, and K. Ichino, phys. stat. sol. (c), 13, pp.677-682 (2016).

  9. "Quantum confined Stark effect of polar and non-polar ZnO/ZnMgO quantum wells grown by MBE", T. Abe, T. Motoyama, M. Yamamoto, A. Yamamoto, S. Iwagashita, H. Kasada, K. Ando, and K. Ichino, phys. stat. sol. (c), 13, pp.602-605 (2016).

  10. "ZnSe-based organic-inorganic hybrid structure ultraviolet avalanche photodiodes with long lifetime and its device integration", R. Inoue, T. Abe, T. Fujimoto. N. Ikadatsu, K. Tanaka, S. Uchida, A. Tazue, H. Kasada, K. Ando, and K. Ichino, Appl. Phys. Express 8, p.22101 (2015).

  11. "Low dark current and stable ultraviolet avalanche photodiode of organic (PEDOT:PSS)-inorganic (ZnSSe) hybrid junction structure", T. Abe, N. Ikadatsu, R.i Inoue, T. Fujimoto, K. Tanaka, A. Tazue, Y. Inagaki, M.o Ebisu, H. Kasada and K. Ando, phys. stat. sol. (c) 11 pp.1300-1303 (2014).

  12. "Fermi-level pinning by carrier compensating midgap donor defect band in homoepitaxially grown p-type ZnO by MBE", T. Masamoto, K. Noda, T. Maejima, R. Natsume, T. Matsuo, A. Akiyama, T. Yukue, S. Hiroe, T. Abe, H. Kasada, Y. Harada, and K. Ando, phys. stat. sol. (c) 11, pp.1353-1356 (2014).

  13. "Growth mechanisms of ZnO(0001) investigated using the first-principles calculation", K. Fujiwara, A. Ishii, T. Abe, and K. Ando, J. Appl. Phys. 112, pp.64301 (2012).

  14. "New ultraviolet avalanche photodiodes (APDs) of organic (PEDOT: PSS)-inorganic (ZnSSe) hybrid structure", Y. Inagaki, M. Ebisu, M. Otsuki, N. Ayuni, T. Shimizu, T. Abe, H. Kasada and K. Ando , phys. stat. sol. (c) 9, pp.1852-1855 (2012).

  15. "Current-pulse-width control of degradation in II-VI and III-N compound blue-UV-white LEDs", Y. Harada, K. Ando, S. Nakagawa, H. Sakamoto, T. Abe and H. Kasada, phys. stat. sol. (c) 9, pp.1844-1847 (2012).

  16. "Stark effects of ZnO thin film and ZnO/ZnMgO quantum wells", K. Sato, T. Abe, R. Fujinuma, K. Yasuda, T. Yamaguchi, H. Kasada and K. Ando, phys. stat. sol. (c) 9, pp.1801-1804 (2012).

  17. "PN接合型ガードリングを形成した青-紫外光波帯・ワイドギャップ半導体アバランシェフォトダイオード(APD)の開発", 稲垣雄介，延一樹，野村まり，阿部友紀，笠田洋文，安東孝止, 電子情報通信学会論文誌C J95-C, pp.18-23 (2012).

  18. "Structural instability of N-acceptors in homo- and heteroepitaxially grown ZnO by MBE", K. Ando, T. Abe, T. Taya, Y. Ishihara, K. Enomoto, Y. Yamazaki, J. Yoshikawa, K. Fujino, H. Nakamura, T. Ohno, and H. Kasada, phys. stat. sol. (b) 247, pp.1453-1456 (2010).

  19. "High sensitive ultraviolet organic-inorganic hybrid photodetectors on ZnSSe grown on p-GaAs with transparent conducting polymer window-layer", T. Abe, D. Katada, K. Miki, K. Tanaka, M. Nomura, Y. Inagaki, T. Tani, M. Ohtsuki, H. Kasada, and K. Ando, phys. stat. sol. (c) 7, pp.1706-1708 (2010).

  20. "New Defect Control for Extremely Long-Lived Widegap-White Light Emitting Diodes", K. Ando, Y. Hashimoto, K. Kanzaki, S. Ohashi, Y. Morita, T. Abe, H. Kasada, and M. Adachi, J. Korean Phys. Society 53, pp.2857-2860 (2008).

  21. "High Sensitive Ultraviolet PIN Photodiodes of ZnSSe n+-i-p Structure/p+-GaAs with extremely thin n+-Window layer grown by MBE", K. Miki, Y. Oshita, D. Katada, K.Nobe, M.Nomura, M.Adachi, T.Abe, H. Kasada, K. Ando, J. Korean Phys. Society 53, pp.2925-2928 (2008).

  22. "Demonstration of Practical Blue Waveguide Stark-Effect Modulators of ZnSe/ZnMgSSe Asymmetric Coupled Quantum Wells", T. Abe, N. Yamane, T. Nishiguchi, H. Kozeni, T. Yoshida, M. Adachi, H. Kasada and K. Ando, J. Korean Phys. Society 53, pp.94-97 (2008).

  23. "New method to control defect reaction induced by electron-hole recombination for long-living widegap light-emitting devices", M. Adachi, Y. Hashimoto, K. Kanzaki, S. Ohashi, Y. Morita, T. Abe, H. Kasada, K. Ando, and M. Tajima, J. Mater. Sci.: Mater. Electron. 19, pp.S299-S302 (2008).

  24. "Polarity control of ZnO on the N-terminated GaN(000-1) surfaces", K. Fujiwara, A. Ishii, T. Ebisuzaki, T. Abe, and K. Ando, Jpn. J. Appl. Phys. 45, pp.8578-8580 (2006).

  25. "Theoretical investigation on the structual properties of ZnO grown on sapphire", K. Fujiwara, A. Ishii, T. Ebisuzaki, T. Abe, and K. Ando, e-Journal of Surface Science and Nanotechnology 4, pp.544-547 (2006).

  26. "First-Principles Calculation for the the Polarity During ZnO Crystal Grown on the C-Terminated 6H-SiC (000-1) Surface", K. Fujiwara, A. Ishii, T. Ebisuzaki, T. Abe, and K. Ando, Jpn. J. Appl. Phys. 45, pp.4926-4928 (2006).

  27. "Slow mode degradation mechanism and its control in new bright and long-lived ZnSe white LEDs", M. Adachi, K. Ando, T. Abe, N. Inoue, A. Urata, S. Tsutsumi, Y. Hashimoto, H. Kasada, K. Katayama and T. Nakamura, phys. stat. sol. (b), 243, pp.943-949 (2006).

  28. "Highly sensitive ultraviolet PIN photodiodes of ZnSSe n+-i-p structure/p+-GaAs substrate grown by MBE", K. Miki, T. Abe, J. Naruse, K. Ikumi, T. Yamaguchi, H. Kasada and K. Ando, phys. stat. sol. (b), 243, pp.950-954 (2006).

  29. "Development of high efficient green LEDs of ZnSSe:Te-ZnMgSSe DH structure on p-GaAs and its degradation mechanism", T. Abe, K. Makimoto, M. Adachi, T. Tanikawa, N. Inoue, T. Nishinaga, H. Kasada and K. Ando, phys. stat. sol. (c), 3, pp.1152-1155 (2006).

  30. "High efficiency blue-violet optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells", T. Abe, T. Yoshida, N. Yamane, T. Nishiguchi, H. Kasada and K. Ando, phys. stat. sol. (c), 3, pp.1209-1212 (2006).

  31. "High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates", T. Abe, K. Ando, K. Ikumi, H. Maeta, J. Naruse, K. Miki, A. Ehara and H. Kasada, Jpn. J. Appl. Phys., 44, pp.L508-510 (2005).

  32. "The role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes", K. Katayama, M. Adachi, T. Abe, A. Urata, S. Tsutsumi, N. Inoue, T. Nakamura and K. Ando, J. Appl. Phys, 96, pp.6789-6793 (2004).

  33. "Enhanced quantum-confined Stark effect in ZnSe/ZnMgSSe asymmetric coupled quantum wells for blue-ultraviolet optical modulators", T. Abe, Y. Ohmura, K. Sasaibe, H. Kasada and K. Ando, phys. stat. sol. (c), 1, pp.1058-1061 (2004).

  34. "New blue-ultraviolet PIN photodiodes of II-VI widegap compounds ZnSSe using p-type GaAs substrates grown by molecular beam epitaxy", T. Abe, H. Maeta, J. Naruse, K. Ikumi, T. Kubota, T. Fujiwara, H. Kasada and K. Ando, phys. stat. sol. (c), 1, pp.1054-1057 (2004).

  35. "Slow mode degradation mechanism of ZnSe based white LEDs", M. Adachi, K. Ando, T. Abe, S. Tsutsumi, N. Inoue, H. Kasada, K. Katayama and T. Nakamura, phys. stat. sol. (b), 241, pp.751-758 (2004).

  36. "Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe single and asymmetric-coupled quantum wells", T. Abe, H. Yamada, N. Itano, T. Kusuhara, Y. Ohmura, H. Kasada and K. Ando, phys. stat. sol. (b), 229, pp.1081-1084 (2002).

  37. "High efficiency and long-lived green and blue light emitting diodes based on ZnSSe:Te active layer grown by molecular beam epitaxy", H. C. Lee, N. Kaneko, M. Watanabe, Y. Fujita, T. Abe, H. Ishikura, M. Adachi, H. Kasada and K. Ando, phys. stat. sol. (b), 229, pp.1043-1047 (2002).

  38. "Mechanism of slow-mode degradation in II-VI wide bandgap compound based blue-green laser diodes", M. Adachi, H. Yukitake, M. Watanabe, K. Koizumi, H. C. Lee, T. Abe, H. Kasada and K. Ando, phys. stat. sol. (b), 229, pp.1049-1053 (2002).

  39. "Highly efficient blue-ultraviolet photodetectors based on II-VI wide-bandgap compound semiconductors", K. Ando, H. Ishikura, Y. Fukunaga, T. Kubota, H. Maeta, T. Abe and H. Kasada, phys. stat. sol. (b), 229, pp.1065-1071 (2002).

  40. "Blue-violet Avalanche-photodiode (APD) and its ionization coefficients in II-VI wide bandgap compound grown by molecular beam epitaxy", H. Ishikura, Y. Fukunaga, T. Kubota, H. Maeta, M. Adachi, T. Abe, H. Kasada and K. Ando, phys. stat. sol. (b), 229, pp.1085-1088 (2002).

  41. "Efficient and long-lived green light emitting diodes based on ZnSSe:Te/ZnMgSSe active layer", H. C. Lee, T. Abe, N. Kaneko, M. Adachi, M. Watanabe, Y. Fujita, H. Kasada and K. Ando, Jpn. J. Appl. Phys., 41, pp.1359-1364 (2002).

  42. "Stable avalanche-photodiode operation of ZnSe-based p+-n structure blue-ultraviolet photodetectors", H. Ishikura, T. Abe, N. Fukuda, H. Kasada and K. Ando, Appl. Phys. Lett., 76, pp.1069-1071 (2000).

  43. "Optimization of ZnSe/ZnTe superlattice structured p-contact for ZnSe-based optical devices", T. Abe, H. Ishikura, Y. Saomoto, K. Goto, K. Masuda, T. Shirai, H. Yamada, S. Kuroda, H. Kasada and K. Ando, J. Cryst. Growth, 214/215, pp.492-496 (2000).

  44. "High quantum efficiency blue-ultraviolet ZnSe pin photodiode grown by MBE", H. Ishikura, N. Fukuda, M. Itoi, K. Yasumoto, T. Abe, H. Kasada and K. Ando, J. Cryst. Growth, 214/215, pp.1131-1133 (2000).

  45. "Demonstration of blue-ultraviolet avalanche photo-diodes of II-VI wide bandgap compounds grown by MBE", T. Abe, H. Ishikura, N. Fukuda, Z. M. Aung, M. Adachi, H. Kasada and K. Ando, J. Cryst. Growth, 214/215, pp.1134-1137 (2000).

  46. "Efficient blue-green light emitting diodes of ZnSSe:Te/ZnMgSSe DH structure grown by molecular beam epitaxy", H. C. Lee, T. Abe, Z. M. Aung, M. Adachi, T. Shirai, H. Yamada, S. Kuroda, K. Maruyama, H. Kasada and K. Ando, J. Cryst. Growth, 214/215, pp.1096-1099 (2000).

  47. "Microscopic defect induced slow-mode degradation in II-VI based blue-green laser disode", M. Adachi, Z. M. Aung, T. Yamaguchi, K. Koizumi, K. Minami, S. Kawamoto, M. Watanabe, T. Abe, H. Kasada, K. Ando, K. Nakano, A. Ishibashi and S. Itoh, J. Cryst. Growth, 214/215, pp.1035-1039 (2000).

  48. "Photoluminescence and photoacoustic spectra of N-doped ZnSe epitaxial layers grown by molecular beam epitaxy", K. Yoshino, M. Yoneta, H. Saito, M. Ohishi, L. H. Chan, T. Abe, K. Ando, T. Ikari, J. Cryst. Growth, 214/215, pp.572-575 (2000).

  49. "II-VI族系ワイドバンドギャップ化合物半導体結晶の微視的欠陥と少数キャリア拡散長", 山口勉, 吉田寛, 阿部友紀, 笠田洋文, 安東孝止, 電子情報通信学会論文誌, C-II Vol. J81, pp.33-41 (1998).

  50. "Nonradiative Carrier Recombination in p-Type ZnSe Thin Films Grown by Molecular Beam Epitaxy", K. Yoshino, Y. Nakagawa, A. Fukuyama, H. Yokoyama, K. Maeda, T. Abe, K. Ando, and T. Ikari, phys. stat. sol. (b), 210, pp.491-495 (1998).

  51. "Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix", S. Rouvimov, Z. Liliental-Weber, Y. Furkawa, T. Abe and S. Noda, J. Electron. Mater., 27, pp.427-432 (1998).

  52. "Mode assignment of excited states in self-assembled InAs/GaAs quantum dots", S. Noda, T. Abe and M. Tamura, Phys. Rev. B 58, pp.7181-7187 (1998).

  53. "Modes of higher energy levels in self-assembled InAs/GaAs quantum dots", S. Noda, T. Abe and M. Tamura, Physica E 2, pp.643-647 (1998).

  54. "Persistent Photoconductivity (PPC) and Related Deep Metastable Center in MBE grown p-type ZnMgSSe", T. Yamaguchi, K. Ando, K. Koizumi, H. Inozume, H. Ishikura, T. Abe and H. Kasada, Jpn. J. Appl. Phys., 37, pp.1453-1456 (1997).

  55. "Near-infrared Intersubband Transitions in InGaAs/AlAs Quantum Wells on GaAs Substrate", T. Asano, S. Noda, T. Abe and A. Sasaki, Jpn. J. Appl. Phys., 35, pp.1285-1291 (1996).